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 2SC4197
Silicon NPN Epitaxial
REJ03G0717-0300 (Previous ADE-208-1097A) Rev.3.00 Aug.10.2005
Application
UHF frequency converter, wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is "TI-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 -55 to +150 Unit V V V mA mW C C
Rev.3.00 Aug 10, 2005 page 1 of 9
2SC4197
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO VCE(sat) hFE Cob fT CG NF Min 25 -- -- -- -- 50 -- 3.0 -- -- Typ -- -- -- -- -- -- 0.85 3.8 19 8 Max -- 0.1 10 0.3 0.3 180 1.3 -- -- -- Unit V A A A V pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 13 V, RBE = VEB = 3 V, IC = 0 IC = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 0.8 mA, fin = 900 MHz fosc = 930 MHz (-5dBm), fout = 30 MHz
Rev.3.00 Aug 10, 2005 page 2 of 9
2SC4197
Main Characteristics
Maximum Collector Dissipation Curve DC Current Transfer Ratio vs. Collector Current
200
Collector Power Dissipation PC (mW)
DC Current Transfer Ratio hFE
150
VCE = 5 V 160
100
120
80
50
40
0 0 50 100 150 1 2 5 10 20 50
Ambient Temperature Ta (C)
Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage
Gain Bandwidth Product vs. Collector Current
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (GHz)
5 VCE = 5 V 4
1.2 IE = 0 f = 1 MHz 1.1
3
1.0
2
0.9
1
0.8
0 1 2 5 10 20 50
0.7 1 2 5 10 20 50
Collector Current IC (mA) Conversion Gain, Noise Figure vs. Supply Voltage
25 IC = 0.8 mA f = 900 MHz 20 CG 25
Collector to Base Voltage VCB (V) Conversion Gain, Noise Figure vs. Collector Current
VCC = 3 V f = 900 MHz 20
Conversion Gain CG (dB) Noise Figure NF (dB)
Conversion Gain CG (dB) Noise Figure NF (dB)
CG
15
15 NF
10 NF 5 fout = 30 MHz fosc = 930 MHz (-5 dBm) 0 1 2 5 10
10
5 fout = 30 MHz fosc = 930 MHz (-5 dBm) 0 0.1 0.2 0.5 1.0 2 5
Supply Voltage VCC (V)
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 9
2SC4197
Conversion Gain, Noise Figure vs. Collector Current
25 VCC = 5 V f = 900 MHz 20
Conversion Gain CG (dB) Noise Figure NF (dB)
CG
15 NF
10
5 fout = 30 MHz fosc = 930 MHz (-5 dBm) 0 0.1 0.2 0.5 1.0 2 5
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 9
2SC4197
S Parameters (Emitter Common)
Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50
IC = 5 mA IC = 10 mA
S11-Frequency 0.8 0.6 0.4 3 0.2 4 5 10 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 10 -10 -0.2 -5 -4 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 -120 -180 150 1 1.5 2 120
S21-Frequency 90 60 Scale : 4/div
30
0
-150
-30
-60 -90 S22-Frequency
S12-Frequency 90 120 Scale : 0.04/div 60 0.4 0.6
0.8
1
1.5 2 3
150
30 0.2
4 5 10
-180
0
0
0.2
0.4 0.6 0.8 1
1.5 2
3 45
10
-10
-0.2 -150 -30 -0.4 -120 -90 -60 -2 -0.6 -0.8 -1 -1.5
-5 -4 -3
Rev.3.00 Aug 10, 2005 page 5 of 9
2SC4197
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.744 0.599 0.506 0.457 0.440 0.430 0.437 0.441 0.452 0.462 ANG. -48.4 -85.5 -110.7 -128.9 -143.5 -155.1 -163.2 -170.9 -177.1 177.5 MAG. 13.142 9.669 7.201 5.696 4.687 3.977 3.453 3.070 2.746 2.508 S21 ANG. 145.9 123.5 109.5 100.6 93.9 88.1 83.5 79.1 75.4 71.9 MAG. 0.034 0.053 0.064 0.072 0.079 0.087 0.095 0.104 0.113 0.122 S12 ANG. 67.5 55.9 52.6 52.7 54.3 57.1 59.4 61.3 63.6 65.6 MAG. 0.876 0.702 0.586 0.520 0.480 0.452 0.432 0.417 0.402 0.390 S22 ANG. -19.1 -28.2 -30.9 -31.2 -31.2 -31.5 -31.7 -32.4 -33.4 -34.5
Test Condition VCE = 5 V, IC = 10 mA, ZO = 50
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.585 0.460 0.408 0.390 0.390 0.391 0.404 0.411 0.426 0.436 ANG. -69.3 -110.1 -133.9 -149.7 -160.7 -169.8 -176.7 178.0 173.1 169.8 MAG. 19.233 12.238 8.571 6.608 5.348 4.503 3.884 3.446 3.069 2.803 S21 ANG. 134.4 112.6 101.3 94.5 88.7 84.4 80.3 76.8 73.4 70.7 MAG. 0.028 0.041 0.052 0.062 0.073 0.084 0.095 0.107 0.119 0.131 S12 ANG. 63.8 58.1 60.0 62.9 65.3 67.7 69.1 70.3 71.5 72.2 MAG. 0.768 0.564 0.468 0.420 0.394 0.375 0.361 0.350 0.339 0.330 S22 ANG. -25.6 -31.4 -30.5 -29.1 -28.1 -27.8 -27.7 -28.2 -29.0 -29.7
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 2.663 5.558 9.651 14.160 18.753 23.019 26.444 29.378 31.931 33.671 IMAG. 5.357 10.174 13.450 15.066 15.624 14.727 13.908 12.040 9.960 7.667 Yfe (mS) REAL 161.804 147.899 125.634 102.261 80.041 57.826 40.437 24.049 10.602 -0.922 IMAG. -34.193 -63.499 -87.205 -102.289 -110.827 -114.923 -113.783 -111.316 -106.726 -101.485 Yre (mS) REAL -0.002 -0.012 -0.041 -0.093 -0.150 -0.214 -0.263 -0.379 -0.466 -0.586 IMAG. -0.425 -0.880 -1.354 -1.820 -2.309 -2.798 -3.305 -3.822 -4.371 -4.913 Yoe (mS) REAL 0.055 0.025 0.026 0.044 0.048 0.124 0.211 0.268 0.407 0.524 IMAG. 0.627 1.270 2.024 2.772 3.510 4.301 4.964 5.828 6.578 7.381
Rev.3.00 Aug 10, 2005 page 6 of 9
2SC4197 Test Condition VCE = 5 V, IC = 10 mA
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL IMAG. 5.212 6.660 10.124 10.767 15.094 11.730 18.933 10.991 21.811 10.074 23.927 8.389 25.848 7.170 26.851 5.955 28.097 4.633 28.686 3.829 Yfe (mS) REAL IMAG. 273.909 -97.915 208.225 -154.453 141.558 -172.198 93.174 -169.490 58.181 -158.809 32.829 -146.284 15.188 -134.592 2.733 -123.322 -7.642 -113.209 -13.979 -104.651 Yre (mS) REAL IMAG. -0.002 -0.430 -0.015 -0.876 -0.044 -1.347 -0.089 -1.817 -0.133 -2.299 -0.195 -2.785 -0.276 -3.302 -0.353 -3.808 -0.443 -4.375 -0.523 -4.908 Yoe (mS) REAL IMAG. 0.029 0.527 0.011 1.307 0.047 2.035 0.064 2.735 0.096 3.501 0.173 4.226 0.224 5.010 0.282 5.760 0.394 6.551 0.466 7.215
Rev.3.00 Aug 10, 2005 page 7 of 9
2SC4197
Conversion Gain and Noise Figure Test Circuit
VTin 1k fosc = 930 MHz (-5 dBm) 2.2 n L4 L1 L2 8p 2.2 n D1 Unit R : C:F L:H D.U.T. 1k L5 220 fout = 30 MHz 100 p 100 p RL = 50 VBB 2.2 n 2.2 n VCC
L3
47 p 100
D1
47 k 2.2 n
fin = 900 MHz
VTout
25 D1 : 1 SV 188
10
L1 : 1 mm Enameled Copper Wire.
10
10
15 30 L3 : 1 mm Enameled Copper Wire.
10
10
25
L2 : 1 mm Enameled Copper Wire.
10
Unit : mm
L4 : 0.5 mm Enameled Copper Wire 1 Turn Inside Dia 3 mm L5 : Inside Dia 5 mm Bobin, 0.2 mm Enameled Copper Wire 20 Turns with Ferrite Core.
Rev.3.00 Aug 10, 2005 page 8 of 9
2SC4197
Package Dimensions
JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Symbol Dimension in Millimeters
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
Nom
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SC4197TI-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Aug 10, 2005 page 9 of 9
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0


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